Tokyo, NFAPost: Toshiba Electronic Devices & Storage Corporation has launched a low on-resistance, 30V N-channel common-drain MOSFET, suitable for devices with USB and for protecting battery packs. Shipments will start after the launch day itself.
SSM10N961L, a 30V N-channel common-drain MOSFET in a new, small, thin package. Until now, Toshiba’s line-up of N-channel common-drain MOSFETs has focused on 12V products, mainly for use in protecting the lithium-ion battery packs of smartphones.
The release of a 30V product realizes a wider selection of applications requiring voltages higher than 12V, such as load switching for the power lines of USB charging devices, and the protection of lithium-ion battery packs in laptop PCs and tablets.
Realizing a bi-directional switch with a low drain-source on-resistance (RDS(ON)) has required two MOSFETs, either 3.3×3.3mm or 2×2 mm, with low RDS(ON). Toshiba’s new product uses a new, small, thin package TCSPAG-341501 (3.37mm×1.47mm (typ.), t=0.11mm (typ.)), and features low source-source on-resistance (RSS(ON)) of 9.9mΩ (typ.) in a single package common-drain configuration
USB Power Delivery (USB PD) that supports a power supply ranging 15W (5V / 3A) to a maximum of 240W (48V / 5A) was developed for devices requiring high power supply. USB PD specifies a role swap function for swapping the power supply and receiving side, and requires devices with USB charging to support bi-directional power supply, so that both sides can supply and receive power. The new product is an N-channel common-drain MOSFET that supports bi-directional power supply, and that has a small mounting area.
Combining the product with a driver IC in Toshiba’s TCK42xG series forms a load switching circuit with a backflow prevention function or a power multiplexer circuit that can switch operations between Make-Before-Break (MBB) and Break-Before-Make (BBM). Toshiba has today released a reference design for a power multiplexer circuit (using common-drain MOSFETs) based on this product combination. Use of the reference design will help to reduce product design and development times.
Toshiba will continue to expand its product line-up and improve characteristics, to raise design flexibility.
Applications
Smartphones
Laptop PCs
Tablets, etc.
Features
High source-source voltage rating: VSSS=30V
Low on-resistance: RSS(ON)=9.9mΩ (typ.) (VGS=10V)
Common‐drain connection structure for bi-directional conduction
Small and thin type TCSPAG-341501 package: 3.37mm×1.47mm (typ.), t=0.11mm (typ.)
Main Specifications
(Unless otherwise specified, Ta=25°C)
Part number
Polarity
N-channel×2
Internal connection
Common-drain
Absolute
maximum
ratings
Source-source voltage VSSS (V)
30
Gate-source voltage VGSS (V)
±20
Source current (DC) IS (A)[1]
9.0
Source current (DC) IS (A)[2]
14.0
Electrical
characteristics
Source-source breakdown voltage V(BR)SSS (V)
VGS＝0V
min
30
Source–source on-resistance RSS(ON) (mΩ)
VGS＝10V
typ.
9.9
VGS＝4.5V
typ.
13.6
Package
Name
TCSPAG-341501
Size (mm)
typ.
3.37×1.47, t=0.11
Sample Check & Availability
About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.
The company’s 21,500 employees around the world share a determination to maximize product value, and promote close collaboration with customers in the co-creation of value and new markets. With annual sales approaching 800-billion yen (US$6.1 billion), Toshiba Electronic Devices & Storage Corporation looks forward to building and to contributing to a better future for people everywhere.
